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| Transistor 2SB1440 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2185 Unit: mm s Features q q 4.50.1 1.60.2 1.50.1 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.60.1 0.4max. 45 1.0-0.2 +0.1 0.40.08 4.0-0.20 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25C) Ratings -50 -50 -5 -3 -2 1* 150 -55 ~ +150 1cm2 Unit V V V A A W C C 0.50.08 1.50.1 3.00.15 3 2 1 0.40.04 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg marking 1:Base 2:Collector 3:Emitter EIAJ:SC-62 Mini Power Type Package Marking symbol : 1I Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob * Conditions IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCE = -2V, IC = -200mA VCE = -2V, IC = -1A IC = -1A, IB = -50mA IC = -1A, IB = -50mA VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz min -50 -50 -5 120 60 typ max Unit V V V 340 - 0.2 - 0.85 80 45 - 0.3 -1.2 MHz 60 pF *h FE1 Rank classification R 120 ~ 240 S 170 ~ 340 Rank hFE1 2.50.1 +0.25 V V 1 Transistor PC -- Ta 1.4 2SB1440 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -120 Ta=25C -100 IB=700A 600A -80 500A -60 400A 300A 200A -20 100A -100 -30 -10 -3 -1 Ta=75C 25C -25C VCE(sat) -- IC IC/IB=20 Collector power dissipation PC (W) 1.2 1.0 0.8 0.6 Collector current IC (mA) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. -40 - 0.3 - 0.1 - 0.03 0.4 0.2 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 -12 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC -100 hFE -- IC IC/IB=20 10000 VCE=-2V 240 fT -- I E VCB=-10V f=200MHz Ta=25C Base to emitter saturation voltage VBE(sat) (V) Transition frequency fT (MHz) -3 -10 -30 -10 -3 25C -1 Ta=-25C 75C Forward current transfer ratio hFE 3000 1000 300 Ta=75C 100 -25C 30 10 3 1 - 0.01 - 0.03 - 0.1 - 0.3 25C 200 160 120 - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 80 40 0 -1 1 3 10 30 100 -1 -3 -10 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob -- VCB 120 Collector output capacitance Cob (pF) 100 IE=0 f=1MHz Ta=25C 80 60 40 20 0 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) 2 |
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